For radiation-hardened CMOS image sensors (CIS). 4H-SiC 64 pixel array CIS were developed. and real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs. https://allfixelectricales.shop/product-category/vacuum-lid-catch/